Document Type
Patent
Publication Date
11-7-2017
Patent Number
9812205
CPC
G11C 15/046 (20130101)
Abstract
Embodiments of the subject invention provide a three transistor, two domain-wall-based magnetic tunnel junction CAM cell (3T-2DW-MTJ CAM). A four transistor, two magnetic tunnel junction ternary CAM cell (4T-2MTJ TCAM) is also provided. An array of the provided CAM cells forms words of various lengths, such as 4-bit, 8-bit, and 16-bit words. Longer CAM words can be formed by an array having hierarchical structures of CAM cells having smaller word sizes, such as 4-bit words or 8-bit words.
Application Number
15/205,813
Recommended Citation
Ghosh, Swaroop and Liu, Cheng Wei, "MTJ-based content addressable memory with measured resistance across matchlines" (2017). USF Patents. 935.
https://digitalcommons.usf.edu/usf_patents/935
Assignees
University of South Florida
Filing Date
2016-07-08
