H01L 29/408 (20130101)
In one embodiment, a method for fabricating thin film tunnel devices includes forming multiple bottom electrodes on a substrate, depositing an insulating layer of material on top of each bottom electrode, and directly depositing a single, continuous top layer of conductive material on the insulating layers that does not contact the bottom electrodes, wherein the bottom electrodes, insulating layers, and continuous top layer together form multiple thin film tunnel devices in which the continuous top layer forms the top electrode for each tunnel device and electrically connects the tunnel devices.
Ratnadurai, Rudraskandan; Krishnan, Subramanian; and Bhansali, Shekhar, "Systems and methods for forming contact definitions" (2016). USF Patents. 848.
University of South Florida