A method of producing an integrated circuit with a carbon nanotube is disclosed. The integrated circuit includes a source, a drain, and a gate, and the source and the drain are positioned on the gate. A catalytic material is deposited onto the source. The catalytic material is then subjected to chemical vapor deposition. This initiates growth of the carbon nanotube such that the carbon nanotube extends from the source. Next, the carbon nanotube is bent toward the integrated circuit such that the carbon nanotube extends between the source and the drain to render the circuit operable.
Schlaf, Rudiger, "Method of producing an integrated circuit with a carbon nanotube" (2004). USF Patents. 770.
University of South Florida