Document Type
Patent
Publication Date
November 2005
Patent Number
6967176
Abstract
Method and apparatus for forming thin silicon oxide films on silicon carbide substrates utilizing an afterglow thermal reactor. The method of forming thin silicon oxide film includes the steps of loading a silicon carbide substrate within a tube, which tube is heated, and the contents pressure is controlled. An oxidizing gas is then passed through an afterglow reactor source or microwave cavity where the gas achieves an excited state of energy. When the neutral species of the excited gas contact the silicon carbide substrate within the heated region of the the tube, a thin silicon oxide film forms on the substrate, at a faster rate and lower temperature than has been known. The tube contents are maintained at a temperature between 600° C. to 1,200° C., and at a pressure less than 50 torr.
Application Number
10/605,609
Recommended Citation
Hoff, Andrew M., "Method for making silicon containing dielectric films" (2005). USF Patents. 722.
https://digitalcommons.usf.edu/usf_patents/722
Assignees
University of South Florida
Filing Date
10/13/2003
Primary/U.S. Class
438/778
