Document Type

Patent

Publication Date

August 2007

Patent Number

7255800

Abstract

The present invention illustrates a bulk silicon etching technique that yields straight sidewalls, through wafer structures in very short times using standard silicon wet etching techniques. The method of the present invention employs selective porous silicon formation and dissolution to create high aspect ratio structures with straight sidewalls for through wafer MEMS processing.

Application Number

10/710,984

Assignees

University of South Florida

Filing Date

08/16/2004

Primary/U.S. Class

216/2

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