G11C 15/046 (20130101)
Embodiments of the subject invention provide a three transistor, two domain-wall-based magnetic tunnel junction CAM cell (3T-2DW-MTJ CAM). A four transistor, two magnetic tunnel junction ternary CAM cell (4T-2MTJ TCAM) is also provided. An array of the provided CAM cells forms words of various lengths, such as 4-bit, 8-bit, and 16-bit words. Longer CAM words can be formed by an array having hierarchical structures of CAM cells having smaller word sizes, such as 4-bit words or 8-bit words.
Ghosh, Swaroop and Liu, Cheng Wei, "MTJ-based content addressable memory with measured resistance across matchlines" (2017). USF Patents. 935.
University of South Florida