A method for producing an interconnect from a first metal trace, through a dielectric, to a second metal trace. The method comprises the steps of heating a portion of the first metal trace to cause thermal expansion and at least partial melting thereof and heating a portion of the second metal trace to cause thermal expansion and at least partial melting thereof such that the thermal expansion of the traces causes at least one crack or fissure in the dielectric to be formed between the traces and such that the melting of the traces causes the metals to fuse together through the crack or fissure, thereby producing the interconnect from the first metal trace to the second metal trace. One of the metal traces may comprise a substantially square donut shape configuration having four interior edges portions, wherein the probability of a successful interconnection is increased due to the increased number of edges present on the top layer from which a crack or fissure to the lower layer can form.
Lee, Rex Alan and Moreno, Wilfrido Alejandro, "Laser-programmable interconnect process for integrated circuit chips" (2001). USF Patents. 802.
University of South Florida