In accordance with the present invention, a novel method to fabricate topological capacitors is provided. The fabrication method of the instant invention is based upon a reversed surface topology utilizing deep reactive ion etching to establish conductive capacitive elements and non-conductive capacitive element groups.
Onishi, Shinzo and Langebrake, Lawrence C., "Method of manufacturing silicon topological capacitors" (2010). USF Patents. 534.
University of South Florida