Document Type
Patent
Publication Date
December 2013
Patent Number
8597473
Abstract
The present invention provides a method of controlling a reactive sputtering system used in coating processes. More specifically, the present invention provides a microprocessor-based control system for reactive gases in a sputtering system, particularly during the start-up phase of operation. The preferred demand for such a reactive gas is predicted for every stage of the operation, and the reactive gas supply is amenable to predictive control provided by object program-driven mathematical formulae. The injection of reactive gas using time-advanced, sequential, mathematically-derived procedures simplifies overall system operation and provides a system with an optimal amount of reactive gas at an optimal time.
Application Number
11/161,976
Recommended Citation
Onishi, Shinzo, "Reactive physical vapor deposition with sequential reactive gas injection" (2013). USF Patents. 268.
https://digitalcommons.usf.edu/usf_patents/268
Assignees
University of South Florida
Filing Date
08/24/2005
Primary/U.S. Class
204/192
