Graduation Year

2005

Document Type

Dissertation

Degree

Ph.D.

Degree Granting Department

Electrical Engineering

Major Professor

Rudy Schlaf

Co-Major Professor

Sergei Ostapenko

Keywords

Photovoltaics, Silicon wafers, Stress, Cracks, Transducers

Abstract

Non-destructive monitoring of residual elastic stress in silicon wafers is a matter of strong concern for modern photovoltaic industry. The excess stress can generate cracks within the crystalline structure, which further may lead to wafer breakage. Cracks diagnostics and reduction in multicrystalline silicon, for example, are ones of the most important issues in photovoltaics now. The industry is intent to improve the yield of solar cells fabrication. There is a number of techniques to measure residual stress in semiconductor materials today. They include Raman spectroscopy, X-ray diffraction and infrared polariscopy. None of these methods are applicable for in-line diagnostics of residual elastic stress in silicon wafers for solar cells. Moreover, the method has to be fast enough to fit in solar cell sequential production line.

Share

COinS