Degree Granting Department
Lawrence P. Dunleavy, Ph.D.
Charles Passant Baylis II, Ph.D.
Radio Frequency, Large-signal, Self-heating, Duty cycle, Time constant
A novel method is shown for fitting and/or validating electro-thermal models using pulsed I(V) measurements and pulsed I(V) simulations demonstrated using modifications of an available non-linear model for an LDMOS (Laterally Diffused Metal Oxide Semiconductor) device. After extracting the thermal time constant, good agreement is achieved between measured and simulated pulsed I(V) results under a wide range of different pulse conditions including DC, very short (<0.1%) duty cycles, and varied pulse widths between these extremes. A pulsed RF load-pull test bench was also assembled and demonstrated for a VDMOS (Vertically Diffused Metal Oxide Semiconductor) and an LDMOS power transistor. The basic technique should also be useful for GaAs and GaN transistors with suitable consideration for the complexity added by trapping mechanisms present in those types of transistors.
Scholar Commons Citation
Somasundaram Meena, Sivalingam, "Pulsed power and load-pull measurements for microwave transistors" (2009). Graduate Theses and Dissertations.