Graduation Year

2004

Document Type

Thesis

Degree

M.S.E.E.

Degree Granting Department

Electrical Engineering

Major Professor

Elias K. Stefanakos.

Co-Major Professor

Shekhar Bhansali.

Keywords

I-V Characteristics of MIM, thin-film insulator, solar energy conversion, MIM, rectenna

Abstract

A Metal-Insulator-Metal (MIM) diode is a high frequency device used for energy harvesting purpose in the RECTENNA. The main objective of this thesis work is to design, fabricate and characterize a thin-film MIM diode. A key issue associated in this research work is the development MIM diode with nanometer thin insulator region. The reason for the development of MIM diode is to rectify a wide spectrum of AC signal to usable DC power. In this thesis work, a planar MIM diode with Aluminum/Aluminum-Oxide/Gold has been fabricated. The thickness of the insulator region obtained was about 3nm. The Metal and insulator depositions were done by sputtering and plasma oxidation, respectively. I-V Characteristics of the diode was measured by making use of in-house set-up and 70% of the devices on a single wafer yielded with better result.

Most of the I-V curves obtained were highly non-linear and asymmetric. Based on the I-V measurement, the logarithmic derivative of I vs. V was plotted and the tunneling behavior was also observed.

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