Robust Bidirectional Continuous Electrowetting Based on Metal–Semiconductor (M–S) Diodes
Document Type
Article
Publication Date
2016
Keywords
droplet actuator, electrochemical diodes, high-speed droplet actuation, reliable electrowetting
Digital Object Identifier (DOI)
https://doi.org/10.1007/s10404-016-1788-0
Abstract
We demonstrate bidirectional continuous electrowetting by embedding metal–semiconductor diodes in the electrowetting substrate. Unlike conventional electrowetting on dielectric, bidirectional continuous electrowetting uses a single electrode pair to actuate a droplet through long distances. As long as the voltage potential is maintained between two end electrodes, the droplet moves toward the electrode with the higher potential. However, previously reported material systems had limited success in repeated actuation. In this work, diodes based on Schottky barriers were fabricated by forming metal–semiconductor junctions between titanium and high-resistivity n-type silicon. The performance enhancements were evaluated using current–voltage measurements of interface pairs. When the titanium is coated with gold to limit electrochemical reactions, the Schottky diodes achieved superior performance compared to electrochemical diodes previously studied. Droplet speed range from 8 to 240 mm/s is reported. Under repeated actuation, the speed of the droplet showed no degradation for up to 2000 cycles (experiment duration).
Was this content written or created while at USF?
Yes
Citation / Publisher Attribution
Microfluidics and Nanofluidics, v. 20, issue 8, art. 122
Scholar Commons Citation
Ni, Qi; Capecci, Daniel E.; Schlafly, Millicent; and Crane, Nathan B., "Robust Bidirectional Continuous Electrowetting Based on Metal–Semiconductor (M–S) Diodes" (2016). Mechanical Engineering Faculty Publications. 9.
https://digitalcommons.usf.edu/egr_facpub/9
