Floating Electrode Electrowetting on Hydrophobic Dielectric with an SiO₂ Layer

Authors

Mehdi Khodayari, University of South Florida
Benjamin Hahne, University of South Florida
Nathan B. Crane, University of South FloridaFollow
Alex A. Volinsky, University of South FloridaFollow

Document Type

Article

Publication Date

2013

Digital Object Identifier (DOI)

https://doi.org/10.1063/1.4807018

Abstract

Floating electrode electrowetting is caused by dc voltage applied to a liquid droplet on the Cytop surface, without electrical connection to the substrate. The effect is caused by the charge separation in the floating electrode. A highly resistive thermally grown SiO2 layer underneath the Cytop enables the droplet to hold charges without leakage, which is the key contribution. Electrowetting with a SiO2 layer shows a memory effect, where the wetting angle stays the same after the auxiliary electrode is removed from the droplet in both conventional and floating electrode electrowetting. Floating electrode electrowetting provides an alternative configuration for developing advanced electrowetting-based devices.

Was this content written or created while at USF?

Yes

Citation / Publisher Attribution

Applied Physics Letters, v. 102, issue 19, art. 192907

Scholar Commons Citation

Khodayari, Mehdi; Hahne, Benjamin; Crane, Nathan B.; and Volinsky, Alex A., "Floating Electrode Electrowetting on Hydrophobic Dielectric with an SiO₂ Layer" (2013). Mechanical Engineering Faculty Publications. 14.
https://digitalcommons.usf.edu/egr_facpub/14